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DSAIHSC000104753.pdf
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TOSHIBA MICROWAVE POWER GaAs FET TIM5359-4 Internally Matched Power GaAs FETs (C-Band) Features ⢠High power - Pi(jB = 36.0 dBm at 5.3 GHz to 5.9 GHz ⢠High gain - GldB = 9.0 dB at 5.3
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ECAD Model
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