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TOSHIBA
MICROWAVE POWER GaAs FET
TIM5359-4
Internally Matched Power GaAs FETs (C-Band)
Features
⢠High power
- Pi(jB = 36.0 dBm at 5.3 GHz to 5.9 GHz
⢠High gain
- GldB = 9.0 dB at 5.3
