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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs (C-Band) Features â¢ High power â¢ p i d B = 42.5 dBm at 5.3 GHz to 5.9 GHz â¢ High gain - G1dB = 7.5 dB a
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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