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    DSAIHSC000104756.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET TIM5053-8 Internally Matched Power GaAs FETs (C-Band) Features • High power ■ PidB = 39 dBm at 5.0 GHz to 5.3 GHz • High gain - G-idB = 9.0 dB at 5.0
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