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TOSHIBA
MICROWAVE POWER GaAs FET
TIM4951-16
Internally Matched Power GaAs FETs (C-Band)
Features
⢠High power
- P1dB = 42.5 dBm at 4.9 GHz to 5.1 GHz
⢠High gain
- G-idB = 9.0 dB at 4.
