DSAIHSC000104817.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs (X, Ku-Band) Features â¢ High power - PldB = 33.5 dBm at 8.5 GHz to 9.6 GHz â¢ High gain - G idB = 7.5 dB at
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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