DSAIHSC000104825.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs (C-Band) Features â¢ High power - PidB = 36.0 dBm at 7.7 GHz to 8.5 GHz â¢ High gain - G1dB = 6.0 dB at 7.7
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

DSAIHSC000104825.pdf preview Download Datasheet