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    DSAZIHA100024006.pdf by American Microsemiconductor

    • 1814-2501 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)250ö V(BR)CBO (V)275 I(C) Max. (A)10 Absolute Max. Power Diss. (W)44 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @
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