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    DSAZIHA100024112.pdf by American Microsemiconductor

    • 2N1759 Transistors Ge PNP Power BJT Military/High-RelN V(BR)CEO (V)35â V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)28 Maximum Operating Temp (øC)95þ I(CBO) Max. (A)3.0m @V
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