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    DSAZIHA100024258.pdf by American Microsemiconductor

    • 2N3595 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)200ã V(BR)CBO (V)200 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0u
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