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    DSAZIHA100024495.pdf

    • American Microsemiconductor
    • 2N6106 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)70 V(BR)CBO (V)80 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @
    • Original

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