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DSAUD0057876.pdf
by Kyosemi
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Si Phototransistor KPT081M32 KPT081M32 Features ø3.8±0.2 · NPN phototransistor · Transparent epoxy potting · Low leak current Applications 24MIN 1.5MAX 5.1±0.5 1.8±0.5
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Unknown
Pb Free
Unknown
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KPT081M32