DSAZIHA100025149.pdf
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American Microsemiconductor
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2SD856B Transistors
Si NPN Power BJT
Military/High-RelN
V(BR)CEO (V)100
V(BR)CBO (V)100
I(C) Max. (A)3.0
Absolute Max. Power Diss. (W)35
Maximum Operating Temp (øC)140õ
I(CBO) Max. (A)300u°
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Original
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