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    DSA00325013.pdf by Infineon Technologies

    • IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS®3 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS
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    200N15N 200N15N3 IPD200N15N3 ipp200n15n3
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