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    DSA2IH00201902.pdf

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    • 1SV274 C A T V T U N IN G . SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE · · · · High Capacitance Ratio : C 2 V / C 25 V = 12.5 (Typ.) Low Series Resistance : rs = 0.6f2 (Typ.) E
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