DSAH00391087.pdf by NEC

Partial File Text PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES · OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 · 4 PIN MINI MOLD PACKAGE: NE6
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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