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DSAH00391087.pdf
by NEC
Partial File Text
PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES · OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 · 4 PIN MINI MOLD PACKAGE: NE6
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Original
RoHS
No
Pb Free
Unknown
Lifecycle
Obsolete
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