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    DSA00491835.pdf by New England Semiconductor

    • TECHNICAL DATA 2N6350 JAN, JTX, JTXV 2N6351 JAN, JTX, JTXV 2N6352 JAN, JTX, JTXV 2N6353 JAN, JTX, JTXV Processed per MIL-PRF-19500/472 NPN DARLINGTON SILICON POWER TRANSISTOR MAXIMUM RATIN
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    1000C 2N6350 2N6351 2N6352 2N6353 JAN 2N6351
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