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    DSA2IH00202703.pdf

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    • TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) YTS3906 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV"" 50nA(Max.), IuEV" 50n
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    DSA2IH00202703.pdf preview Download Datasheet

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    TRANSISTOR Marking XB PNP YTS3906

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