This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
2SB1481
SW ITCHING APPLICATIONS
SILICON PNP EPITAXIAL TYPE
U nit in mm
10 ±0.3
· · ·
High DC Current Gain : hFE = 2000(M m .)(V cE = -2V , IC = -1 .5 A ) Low Saturation Voltage : VcE(sat