DSA2IH00203010.pdf

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Partial File Text 2SB1481 SW ITCHING APPLICATIONS SILICON PNP EPITAXIAL TYPE U nit in mm 10 ±0.3 · · · High DC Current Gain : hFE = 2000(M m .)(V cE = -2V , IC = -1 .5 A ) Low Saturation Voltage : VcE(sat
Datasheet Type Scan
ECAD Model

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