DSA00361753.pdf by Toshiba

Partial File Text 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) ·
Datasheet Type Original
RoHS No
Pb Free No
Lifecycle Obsolete
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2-21F1A 2SB1556 2SD2385

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