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    DSAEDA000116096.pdf

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    • PD - 96312A IRF9362PbF HEXFET® Power MOSFET VDS -30 V 21.0 (@VGS = -10V) mΩ RDS(on) max 32.0 mΩ Qg (typical) 13 nC ID -8.0 6   ' * 
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