DSA00362355.pdf by Toshiba

Partial File Text HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm HN2S01F is composed of 3 independent diodes. Low reverse curre
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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HN2S01F Power DIODES, toshiba

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