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    DSA00250067.pdf

    • STMicroelectronics
    • STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features AEC Q101 compliant 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ESD gate-emitter protection
    • Original
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    DSA00250067.pdf preview Download Datasheet

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