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DSAEDA000117168.pdf
by International Rectifier
Partial File Text
PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features ⢠Low VCE (on) Non Punch Through IGBT Technology. ⢠Low Diode VF. ⢠10µs Sh
Datasheet Type
Original
RoHS
No
Pb Free
Unknown
Lifecycle
Transferred
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IRGIB10B60KD1PPBF
IRGIB10B60KD1
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