DSASW00427334.pdf by NEC

Partial File Text CB-130 0.13 µm Features >> 0.13 µm (drawn) silicon gate CMOS process >> Four transistor characteristics (low power, mid-range power, high speed, ultra-high speed) selectable on the same chip
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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CB-130UH lvds to eDP nec asic product letter nec cb cell-based product letter Power consumption of FCBGA

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