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Partial File Text TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01 FU H N 2 S 0 1 FU LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 1.25 ± 0.1 Unit in mm · · HN2S01F is c
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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