DSA00364403.pdf by Hitachi Semiconductor

Partial File Text 2SK3288 Silicon N Channel MOS FET High Speed Switching ADE-208-803 (Z) 1st.Edition. June 1999 Features · Low on-resistance R DS = 2.7 typ. (VGS = 10 V , ID = 50 mA) R DS = 4.7 typ. (VGS = 4
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