DSA2IH00206571.pdf by Not Available

Partial File Text T O S H IB A MICROWAVE SEMICONDUCTOR MICROWAVE POWER G aAs FET TECHNICAL DATA FEATURES : LOW INTERMODULATION DISTORTION IM3 a - 4 5 d B c a t PO * 31.5 dBm , S ingle C arrier Level HIGH POWE
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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