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TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band)
Features
· High power - P idB = 36.0 dBm at 4.9 GHz to 5.1 GHz · High gain - G 1dB= 10.0 dB at 4.9 GHz to 5.10 GHz · Bro
