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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band) Features · High power - P idB = 39 dBm at 4.9 GHz to 5.10 GHz · High gain - G 1dB = 9.5 dB at 4.9 GHz to 5.1 GHz · Broad
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