This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band)
Features
· High power - P idB = 36.0 dBm at 6.4 GHz to 7.2 GHz · High gain - G 1dB = 8.5 dB at 6.4 GHz to 7.2 GHz · Broa
