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    • TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - PidB = 33.5 dBm at 8.5 GHz to 9.6 GHz · High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz · Br
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