This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band)
Features
· High power - PidB = 36.5 dBm at 8.5 GHz to 9.6 GHz · High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz · Br
