This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
TOSHIBA
MICROWAVE POWER GaAs FET High Power GaAs FETs (L, S-Band)
Features · High power - P1dB = 39.5 dBm at 1.8 GHz · High gain - G idB = 10.0 dB at 1.8 GHz · Hermetically sealed package RF Perform