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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features TIM0910-10 · High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz · High gain - G1dB = 6.0 dB at 9.5 GH
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