DSA2IH00207013.pdf

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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features · Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level ·
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DSA2IH00207013.pdf preview Download Datasheet