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DSA00152919.pdf
Manufacturer
Cree
Partial File Text
CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree's CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifi
Datasheet Type
Original
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