DSA00152934.pdf by Cree

Partial File Text CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree's CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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