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DSA00153642.pdf
Manufacturer
Cree
Partial File Text
CGH40010 10 W, RF Power GaN HEMT Cree's CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpos
Datasheet Type
Original
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User Tagged Keywords
40010P
CGH40010 Large Signal Model
CGH40010F
CGH40010P
CGH40015
CGH40015F
F/CGH40010 Large Signal Model