DSA00153826.pdf by Cree

Partial File Text PRELIMINARY CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree's CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
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CGH35120 CGHV22 CGHV22100 cree rf