DSA00743516.pdf by Toshiba
- TOSHIBA MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) Features · Medium power - P1dB = 21 dBm at f = 8 GHz · High gain - G1dB = 9 dB at f = 8 GHz · Suitable for C-Band amplifier · Ion implanta
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