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    DSA00370770.pdf by IXYS

    • Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T VDSS ID25 RDS(on) = 100 V = 200 A 5.5 m TO-247 (IXTH)
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