DSA00751141.pdf by Toshiba

Partial File Text 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm Output Power Gain Drain Efficiency : PO = 15.0 dBmW (Min.) : GP = 15
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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