DSAASSA00010960.pdf by International Rectifier

Partial File Text PD - 96358 INSULATED GATE BIPOLAR TRANSISTOR Features · Low VCE (on) Non Punch Through IGBT Technology. · 10µs Short Circuit Capability. · Square RBSOA. · Positive VCE (on) Temperature Coefficien
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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