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    DSAASSA00011224.pdf by International Rectifier

    • IRFH8316PbF HEXFET® Power MOSFET VDS Vgs max RDS(on) max (@VGS = 10V) (@VGS = 4.5V) 30 ± 20 2.95 4.30 30.0 50 V V m nC A Qg typ ID (@Tc(Bottom) = 25°C) i PQFN 5X6 mm Applications
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