DSA00501065.pdf by Toshiba

Partial File Text 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF (3) = 0.23V (typ.)@ IF = 5mA CATHODE MARK · Unit: mm
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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