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    DSAEDA000123582.pdf by IXYS

    • High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 6A VCE(sat) ≤ 3.4V IXBH6N170 IXBT6N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ra
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