DSAEDA000123601.pdf by IXYS
- Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B12N300 C2 C1 G1 (Electrically Isolated Tab) VCES = 3000V IC110 = 11A V
- Original
- Yes
- Unknown
- Transferred
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